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| NTE267 Silicon NPN Transistor High Gain Darlington Power Amp, Switch Features: D Forward Current Transfer Ratio: hFE = 90,000 min. D Free-Air Power Dissipation: 1.33W @ TA = +50C D Hard Solder Mountdown Applications: D Driver D Regulator D Audio Output D Relay Substitute D Touch Switch D D D D Oscillator IC Driver Servo Amplifier Capacitor Multiplier Absolute Maximum Ratings: (TA = +25C, unless otherwise specified) Collector to Emitter, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter to Base, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V Collector to Emitter, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Power Dissipation, PT Tab at +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W Free Air at +50C w/Tab . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W Thermal Resistance, Junction to Case (Note 1), RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20C/W Thermal Resistance, Junction to Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 1/16" 1/32" from case, 10sec max), TL . . . . . . . . . . +260C Note 1. Tab temperature is measured on center of tab, 1/16" from plastic body. Electrical Characteristics: (TA = +25C, unless otherwise specified) Parameter Forward Current Transfer Ratio Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Collector Capacitance Gain Bandwidth Product Switching Times Delay Time and Rise Time Storage Time Fall Time td & tr ts tf IC = 1A, IB1 = 1mA IC = 1A, IB1 = IB2 = 1mA IC = 1A, IB1 = IB2 = 1mA - - - 100 350 800 - - - ns ns ns Symbol hFE Test Conditions VCE = 5V, f = 1kHz IC = 200mA IC = 20mA VCE(sat) IC = 500mA, IB = 0.5mA, Note 2 VBE(sat) IC = 500mA, IB = 0.5mA ICES ICBO IEBO Ccbo fT VCE = Rated VCES, TJ = +25C VCE = Rated VCES, TJ = +150C VEB = 13V VCB = 10V, f = 1MHz VCE = 5V, IC = 20mA Min 90k 90k - - - - - - - Typ - - - - - - - 5 75 Max - - 1.5 2.0 0.5 20 0.1 10 - V V A A A pF MHz Unit Note 2. Pulsed measurement, 300sec pulse width, duty cycle 2%. .380 (9.56) C .500 (12.7) .180 (4.57) .132 (3.35) Dia C B 1.200 (30.48) Ref .325 (9.52) .300 (7.62) .070 (1.78) x 45 Chamf .050 (1.27) E .400 (10.16) Min E B C .100 (2.54) .100 (2.54) |
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